Jeongwon Park

Jeongwon Park

Associate Professor He, him, his

“The best way to predict the future is to invent it”  -- Alan Kay (1971) at a 1971 meeting of PARC


Dr. Park is an associate professor in the Department of Electrical and Biomedical Engineering at the University of Nevada, Reno since July 2019. His expertise is in the areas of IoT sensors and sensor networks for advanced manufacturing, nanotechnology-enabled flexible hybrid electronics, nanoelectronics, semiconductor, and nanomaterials.

He is a recipient of Chinese Academy of Sciences (CAS) President's International Fellowship Initiative (PIFI) at the Beijing Institute of Nanoenergy and Nanosystems (BINN), CAS. Prior to that, he was an associate professor at the School of Electrical Engineering and Computer Science and the University of Ottawa from 2016 to 2019, and a scientist at SLAC National Accelerator Laboratory, Stanford University from 2014 to 2016. For six years, he served as a senior technologist to support the corporate chief technology officer (CTO) and business units at Applied Materials, USA. He has been a guest researcher at the Lawrence Berkeley National Laboratories, a visiting scholar in the Department of Electrical Engineering at Stanford University, and an adjunct professor in the Department of Electrical Engineering at Santa Clara University.

He received his Ph.D. (2008) in materials science and engineering from the University of California, San Diego, USA. He is a senior member of IEEE.

  • Ph.D., University of California, San Diego, 2008
    Topics: nanoelectronics, sensors, and nanotechnology

Prospective graduate students

We seek motivated undergraduate and graduate students interested in nano-electronics, micro/nanodevice fabrication, flexible hybrid electronics, low-dimensional nano-materials (1D/2D CNT, graphene, MoS2, etc), semiconductor, wide-bandgap materials, wearable devices and sensors, bio-sensors, energy materials and devices, MEMS/NEMS, and materials science.

Research projects in our nanoelectronics lab are highly multi-disciplinary. They involve the use of cutting-edge electrical/optical technologies to investigate some of the most complex and intriguing topics in materials physics and devices.

To apply for a project in our research group, please send an email to with the following:

  1. A short description of your interests
  2. An updated CV
  3. A bachelor’s degree transcript and master’s degree transcript for Ph.D. candidates.

Learn more about our graduate programs


Research interests

My specific research interests have been focused on solving challenges on electronics including transistors with nanofabrication processes and materials for 7nm technology node and beyond. While my on-going research activities continue to evolve, my historical research programs can be divided into three focus areas, namely:

  1. Electronic materials research on the latest challenges logic devices and memory devices including process and materials
  2. Novel electronic device applications with nano-scale 2-D materials, nanowires, and QDs
  3. GaN electronics

A summary of these researches follows.

Materials integration and nanofabrication for advanced device applications

I obtained a significant amount of my microfabrication and nanofabrication experience while at Applied Materials and Sun Microsystems. Since I gained that experience, I have been able to leverage both the new skills and my materials & device background to contribute to several advanced device applications. The figure shows challenges of the future nanowire-based devices that I am interested in investigating, which describes the challenges of the gate all around the structure with nanowires transistor array with a nanoscale device. This effort utilized deposition equipment (CVD, PVD, and ALD systems) that are capable of depositing thin films of metals, semiconductors, and insulating materials. These tools allow these thin film materials (metals, semiconductors, and insulators) to be deposited in a combinatorial or layered fashion.

Novel electronic device applications with nano-scale 2-D materials, nanowires, and QDs

Two-dimensional electronic materials (MoS2, etc): Two-dimensional materials are attractive for use in next-generation nanoelectronic devices as they are relatively easy to fabricate complex structures from compared to one-dimensional materials. Because monolayer MoS2 has a direct bandgap, it can be used to construct interband tunnel FETs. It will offer lower power consumption than classical transistors. Monolayer MoS2 could be used in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting, and energy-related materials and devices. Novel electronic applications with 2D materials and nanowires for biosensors: For example, Graphene is a covalent 2D electron system comprised of a single layer of carbon atoms arranged in a hexagonal honeycomb lattice. It has a unique electronic structure with linear dispersion, vanishing effective mass, extremely high carrier velocities, strong optical absorption over a wide wavelength range, and excellent thermal and mechanical properties. Because of these characteristics, there has been a strong interest in using it in electronics and optoelectronics. The limited gate-field induced tunability of the current through it and the excellent transport properties recommend it for fast analog and sensor applications. This will be a good platform for developing low-cost diagnostic devices for global health problems (HIV, or e.coli infection etc). Moreover, I aim to develop technologies to capture various cell types from blood using nanoparticles and microscale technologies.

GaN electronics

Integral to consumer electronics and many clean energy technologies, power electronics can be found in everything from electric vehicles and industrial motors, to laptop power adaptors and inverters that connect solar panels and wind turbines to the electric grid. For nearly 50 years, silicon chips have been the basis of power electronics. However, as clean energy technologies and the electronics industry has advanced, silicon chips are reaching their limits in power conversion — resulting in wasted heat and higher energy consumption. GaN is a revolutionary technology that will impact two major and distinct applications: high frequency and high power electronics. Through NRC’s GaN Electronics initiative in Canada, this will ensure that GaN technology will create wealth and a greener future for Canadians by establishing a strong industrial GaN manufacturing capability. NRC is the only Canadian foundry for GaN electronics and a global leader in the field. By collaborating with NRC at Ottawa, GaN-based technology will be gained a distinct competitive advantage with having access to the leading national research and technology development facilities, including the Ottawa-based Canadian Photonics Fabrication Centre (CPFC).

Deep learning and wearables for Parkinson’s disease

IoT sensor networks We will also introduce the use of technology to generate quantitative unbiased outcomes related with PD motor symptoms, such as tremor, gait, and falls, or to determine the level of engagement in physical activity in the context of an exercise program for PD. In order to do this, we have assembled a multidisciplinary group of academic researchers which include engineers with expertise in sensors, nanotechnology, mobile devices, computer science specialists, and specialists in understanding PD symptomology (kinesiologists and PD specialists). These individuals will be supported by industry who will provide additional resources including hardware and software development, and opportunities for commercialization. 

Signal process and electrode design for Deep Brain Stimulation 

The Deep Brain Stimulation (DBS) for Parkinson’s Disease Project has been researching a way to improve DBS through the development of a novel electrode that can both stimulate and record brain activity within the same device. Currently, recording and stimulation have to be done separately which lengthens the time of the procedure and can lead to discrepancies in the position of the electrode. Both issues increase the risk of complications.

Advancing ultrasound performance through data acquisition: Creating a comprehensive guideline for physicians-in-training

Inexperienced physicians today do not automatically know how to manipulate an ultrasound probe to their advantage. They need instructions and help from other physicians for a period of time before they learn how to properly use an ultrasound device. Therefore the goal would be to find a way to create a guideline/manual (written instructions) to assist physicians in performing an ultrasound.

Sensor development for sensitive detection and identification of airborne chemicals and biological agents

Portable explosive detectors, chemical identifiers and personal radiation detectors (PRD) are now commercially available and can routinely be used in the field for environmental, forensic and material sampling. These devices are based on well-known technologies such as mass spectrometry, patch-chemical reactions, electrochemical sensing, ion-mobility spectrometry, laser-induced fluorescence, acoustic-wave-chemical sensing, and fiber-based optical detection. Although constant progress is being made to improve these techniques, a disruptive sensing technology can improve safety and help counter terrorism by drastically enhancing detection performances in terms of sensitivity, selectivity, response time and repeatability. The main objective of this proposal is to develop and demonstrate a new sensing technology.


Selected publications

Journals Articles:

  1. Laser induced patterning of diffraction grating for X-ray Optics (under preparation)
  2. Tailoring the electronic properties of germanene on van der Waals two dimensional SiC substrate, Md. Sherajul Islam, Rayid Hasan Mojumder, Naim Ferdous, Jeongwon Park, npj 2D Materials and Applications (submitted) (2020)
  3. Greener preparation of incredibly monodisperse silver nanoparticles and their antibacterial and cytotoxic potency, RSC Advances (submitted) (2020)
  4. Metallic CNT Tolerant Field Effect Transistor using Dielectrophoresis, IEEE Transactions on Nanotechnology, (Submitted) (2020)
  5. Combined effect of 13C isotope and vacancies on the phonon properties in AB stacked bilayer graphene, Khalid N.Anindy, Md Sherajul Islam, Akihiro Hashimoto, and Jeongwon Park, Carbon (under revision) (2020)
  6. Phonon localization in single wall carbon nanotube: Combined effect of 13C isotope and vacancies, JAP (submitted) (2020)
  7. CNFET SRAM Bit Cell for Processing In Memory, IEEE Transactions on Circuits and Systems (submitted) (2020)
  8. E-Band CMOS Integrated Yagi Antenna with Hilbert Curve Shaped Artificial Magnetic Conductor, Semiconductor Science and Technology (submitted) (2020)
  9. Landau Raman Regulation Observed from Geometric Graphene Structures Including Single-Wall Carbon Nanotubes, Scientific Reports (Under revision) (2019)
  10. Graphene-based Chemical and Biological Sensors, 2D Materials (Submitted) (2019)
  11. Mechanistic insight into the limiting factors of graphene-based environmental sensors, ACS Applied Materials & Interfaces (under revision) (2019) preprint arXiv:1911.05757 (2019):
  12. Portable and wireless signal transducer for next-generation environmental monitors based on 2D materials. Dallaire N., Zhang Y., Deng X., Andrzejewski L., Guay J.-M., Rautela R., Scarfe S., Park J., Ménard J.-M.,Luican-Mayer A., Under review, preprint arXiv:1911.05764 (2019):

Journals Articles (published):

  1. New Small-Signal Extraction Method Applied to GaN HEMTs on Different Substrates, International Journal of RF and Microwave Computer-Aided Engineering, Mohamad Al Sabbagh, Mustapha C. E. Yagoub, Jeongwon Park (2020), Impact Factor: 1.472,
  2. Temperature-induced localized exciton dynamics in mixed Lead–Tin based CH3NH3Pb1-xSnxI3 Perovskite materials, AIP Advances (Accepted) (2020) Impact Factor: 1.579
  3. Vacancy induced thermal transport in two-dimensional silicon carbide: a reverse non-equilibrium molecular dynamics study, A. S. M. Jannatul Islam, Sherajul Islam, Naim Ferdous, Jeongwon Park and Akihiro Hashimoto, Physical Chemistry Chemical Physics, 2020, Impact factor: 3.567, DOI: 10.1039/D0CP00990C (2020),
  4. HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing, Sherajul Islam , Shahrukh Sadman, A. S. M. Jannatul Islam, and Jeongwon Park, AIP Advances 10, 035202 (2020) Impact Factor: 1.579;
  5. Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon, Khalid N.Anindy, Md Sherajul Islam, Jeongwon Park, Ashraful G.Bhuiyan, Akihiro Hashimoto, Current Applied Physics, 20 (4), 572-581 (2020), Impact Factor: 2.010;
  6. Molecular dynamics study of thermal transport in single-layer silicon carbide nanoribbons, Sherajul Islam, A. S. M. Jannatul Islam, Orin Mahamud, Arnab Saha, Naim Ferdous, Jeongwon Park, and Akihiro Hashimoto, AIP Advances 10, 01511 (2020), Impact Factor. 1.579;
  7. Anisotropic Mechanical Behavior of Two Dimensional Silicon Carbide: Effect of Temperature and Vacancy Defects, ASM Jannatul Islam, Md. Sherajul Islam, Naim Ferdous, J Park, A G Bhuiyan, Akihiro Hashimoto, Res. Express 6 125073 (2019), Impact Factor 1.449
  8. Anomalous Temperature Dependent Thermal Conductivity of Two Dimensional Silicon Carbide, A S M Jannatul Islam, Md Sherajul Islam, Naim Ferdous, Jeongwon Park, A G Bhuiyan and Akihiro Hashimoto, Nanotechnology, 30, 445707 (2019), Impact Factor 3.399
  9. Widely tunable electronic properties in graphene/two-dimensional silicon carbide van der Waals heterostructures, Asmaul Smitha Rashid, Md. Sherajul Islam, Naim Ferdous Khalid N. Anindya, Jeongwon Park, Akihiro Hashimoto, Journal of Computational Electronics, 18(3), 836-845 (2019), Impact Factor 1.637;
  10. Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin-Film Transistors, Owen A. Melville, Trevor M. Grant, Brendan Mirka, Nicholas T. Boileau, Jeongwon Park, and Benoît Lessard, Advanced Electronic Materials, 1900087 (2019), Impact Factor 5.99;
  11. Scanning Microwave Imaging of Optically Patterned Ge2Sb2Te5, Scott Johnston, Edwin Ng, Scott W. Fong, Walter Y. Mok, Jeongwon Park, Peter Zalden, Anne Sakdinawat, H.-S. Philip Wong, Hideo Mabuchi, and Zhi-Xun Shen, Appl. Phys. Lett.114, 093106 (2019), Impact factor‎: ‎3.521, DOI: 10.1063/1.5052018
  12. Tunable Electronic Properties in Stanene and Two Dimensional Silicon-Carbide Heterobilayer: A First Principles Investigation, Naim Ferdous, Md. Sherajul Islam, Jeongwon Park, A. Hashimoto, AIP Advances 9, 025120 (2019), Impact Factor. 1.579;
  13. Atmospheric-pressure plasma by remote dielectric barrier discharges for surface cleaning of large area glass substrates, D.-J. Kim and J. Park, Plasma Res. Express 1, 015015 (2019) (Corresponding author), DOI: 1088/2516-1067/ab021c
  14. The effects of nanostructures on mechanical and tribological properties of TiO2 nanotubes, Y. Yoonand J. Park, Nanotechnology 29, 165705 (2018), Impact Factor 3.399 (Corresponding author)
  15. Patterning of graphene for flexible electronics with remote dielectric barrier discharge, Duk-jae Kim,
  16. Park, Jeon-gun Han, Japan. J. of Appl. Phys., 55, 085102 (2016), Impact Factor. 1.471 (Corresponding author)
  17. Demonstration of organic volatile decomposition and bacterial sterilization by miniature dielectric barrier discharges on low-temperature cofired ceramic electrodes, D.-J. Kim, Y.-K. Shim, Park, H.-J. Kim, J.-G. Han, Japan. J. of Appl. Phys., 55(4), 040302 (2016), Impact Factor. 1.471
  18. Metal -Nanocarbon Contacts, Patrick Wilhite, Anshul A. Vyas, Jason Tan, Jasper Tan, Toshishige Yamada, Phillip Wang, Jeongwon Park, and Cary Y. Yang, Sci. and Tech. 29, 054006, 1- 16 (2014): Selected by the journal’s Editorial Board as a Highlight of 2014.
  19. Mobility Saturation in Tapered Edge Bottom Contact Copper Phthalocyanine Thin Film Transistors,
  20. Royer, J. Park, C. Colesniuc, J. S. Lee, T. Gredig, S. Jin, I. K. Schuller, W. C. Trogler, A. C. Kummel, J. Vac. Sci. Technol. B 28, C5F22 (2010)
  21. Ambient induced degradation and chemically activated recovery in copper phthalocyanine thin film transistor Channel, Park, J. E. Royer, C. Colesniuc, F. I. Bohrer, A. Sharoni, S. Jin, I. K.Schuller,
  22. C. Trogler, A. C. Kummel, J. Appl. Phys. 106, 034505 (2009)
  23. Comparative Gas Sensing in Colbalt, Nickel, Copper, Zinc, and Metal-Free Phthalocyanine Chemiresistors, F. I. Bohrer, C. N. Colesniuc, Park, M. E. Ruidiaz, I. K. Schuller, A. C. Kummel, W. C. Trogler, J. Am. Chem. Soc., 131(2), 478-85 (2009)
  24. Analyte chemisorption and sensing on n- and p-channel copper phthalocyanine thin-film transistors,
  25. Yang, J. Park, C. N. Colesniuc, I. K. Schuller, J. E. Royer, W. C. Trogler, and A. C. Kummel, J. Chem. Phys. 130 164703 (2009)
  26. Geometry Transformation of Periodically Patterned Si Nanotemplates by Dry Oxidation, Park, L.-
  27. Chen, D. Hong, C. Choi, M. Loya, K. Brammer, P. Bandaru and S. Jin, Nanotechnology 20, 015303 (2009)
  28. Morphology control of carbon nanotubes through focused ion beams, Loya, J. Park, L. H. Chen,
  29. S. Brammer, P. R. Bandaru and S. Jin, Nano. 3, 449–454(2008)
  30. Bilayer processing for enhanced contact electrode configuration in ultrathin organic transistors, Park, R. D. Yang, C. N. Colesniuc, A. Sharoni, S. Jin, I. K. Schuller, W. C. Trogler and A. C. Kummel, Appl. Phys. Lett. 92, 193311 (2008)
  31. Selective Detection of Vapor Phase Hydrogen Peroxide with Phthalocyanine Chemiresistors, F. I. Bohrer, C.N. Colesniuc, Park, I. K. Schuller, A. C. Kummel, and W. C. Trogler, J. Am. Chem. Soc., 130 (12), 3712 -3713, (2008)
  32. Ultra-low drift in organic thin-film transistor chemical sensors by pulsed gating, R. Yang, J. Park, C. N. Colesniuc, I. K. Schuller, W. C. Trogler and A. C. Kummel, J. Appl. Phys. 102, 034515 (2007)
  33. Ultrathin organic transistors for chemical sensing, R. D. Yang, T. Gredig, C. N. Colesniuc, Park, I. K. Schuller, W. C. Trogler, and A. C. Kummel, Appl. Phys. Lett. 90, 263506 (2007), also accepted to the Virtual Journal of Nanoscale Science & Technology, (2007).
  34. Gas Sensing Mechanism in Chemiresistive Cobalt and Metal-Free Phthalocyanine Thin Films, F. I. Bohrer, Sharoni, C. Colesniuc, J. Park, I. K. Schuller, A. C. Kummel, and W. C. Trogler, J. Am. Chem. Soc., 129 (17), 5640 -5646 (2007)
  35. ZnO Nanowire UV Photodetectors with High Internal Gain, C. Soci, A. Zhang, B. Xiang, S. A. Dayeh,
  36. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, Nano Lett., 7 (4), 1003 -1009 (2007)
  37. Enhanced Room Temperature Ferromagnetism in Co- and Mn-Ion Implanted Silicon, P.R. Bandaru, Park, J.S. Lee, Y.J. Tang, L. H. Chen, S. Jin, S.A. Song, and J. O'Brien, Appl. Phys. Lett. 89, 112502 (2006).
  38. Three-way electrical gating characteristics of metallic Y-junction carbon nanotube transistors, Park,
  39. Daraio, S. Jin, P.R. Bandaru, J. Gaillard and A. M. Rao, Appl. Phys. Lett. 88, 243113 (2006)
  40. Chemical identification using an impedance sensor based on dispersive charge transport, D. Yang,
  41. Fruhberger, J. Park, C. Kummel, Appl. Phys. Lett. 88, 074104 (2006)
  42. Electrode independent chemoresistive response for cobalt phthalocyanine in the space charge limited conductivity regime, A. Miller, R. D. Yang, M. J. Hale, J. Park, B. Fruhberger, I. K. Schuller, A.
  43. Kummel, William Trogler, J. Phys. Chem. B; 110(1) 361 - 366 (2006)
  44. Improvement of the biocompatibility and mechanical properties of surgical tools with TiN coating by PACVD, Park, D.-J. Kim, Y.-K. Kim, K.-H. Lee, K.-H. Lee, H. Lee, and S. Ahn, Thin Solid Films, 435, 102-107 (2003)
  45. Effect of Fluorine on the Properties of Low Dielectric Fluorinated Amorphous Carbon Films, S.-H. Yang, S. Lee, Park, J.-Y. Kim and J.-W. Park, J. Korean Phys. Soc., 35, S361-364 (1999)
  46. Effects of Deposition Temperature on Low-Dielectric Fluorinated Amorphous Carbon Films for Ultra Large-Scale Integration Multilevel Interconnect, S.-H. Yang, Park, J.-Y. Kim, Y.-K. Lee, B.-R. Cho, D.-K. Park, W.-H. Lee and J.-W. Park, Microchemical Journal, 63 (1), 161-167 (1999)
  47. Effect of Deposition Temperature on Characteristics of Low Dielectric Fluorinated Amorphous Carbon Thin Films, Park, S.-H. Yang and J.-W. Park, Korean J. Material Research, 9 (12), 1211- 1215 (1999)
  48. Effects of Deposition gas composition on the characteristics of a-C:F thin films for use as low dielectric constant ILD, Park, S.-H. Yang, S. Lee, S. Sohn, K. Oh and J.-W. Park, J. Korea Vacuum Society, 7 (4), 368-373 (1998)
  49. Thermal Stability Enhancement of Cu/WN/SiOF/Si Multilayer by Post-Plasma Treatment of Fluorine-Doped Silicon Dioxide, S. Lee, D. J. Kim, S.-H. Yang, Park, S. Shon, K. Oh, Y.-T. Kim, J-Y. Kim, G.-Y. Yeom and J.-W. Park, J. Appl. Phys, 85, 473-477 (1998)

Patents / Technology disclosures:

  1. Griffith, J. Park, P. Narwankar, N. Nguyen, H. Nguyen, T. Chan, J. Xu, Methods and apparatus for cleaning substrate surfaces with atomic hydrogen, CN104025264A, US20130160794, WO2013096748 A1, US20150311061 (2015)
  2. Park, J. Griffith, P. Narwankar, M. Narasimhan, B. Zheng, Methods and apparatus for cleaning substrate structures with atomic hydrogen, WO 2014100047 A1 (2014)
  3. Park, J. Cruz, P. Narwankar, Methods for removing photoresist from substrates with atomic hydrogen, WO 2014164493 A1 (2014)
  4. Park, J. Cruz, P. Narwankar, Methods and apparatus for processing germanium containing material, a III-V compound containing material, or a II-VI compound containing material disposed on a substrate using a hot wire source, US 20140179110 (2014)
  5. Chatterjee, J. Park, Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (HWCVD) chamber, US 20120312326 A1 (2011)
  6. Kummel, J. Park, Multi-rate resist method to form organic TFT contact and contacts formed by same, US20110108815 (2009)

Conference proceedings:

  1. Single Ended Computational SRAM Bit-Cell, International Symposium on Signals, Circuits and Systems (ISSCS 2019), July 11, 2019 to July 12, 2019, Iasi, Romania
  2. (Invited) Contacts with Nanocarbon Structures in Flexible Electronics, Jeongwon Park, Changjian Zhou, Cary Y. Yang, 2018 International Flexible Electronics Technology Conference (IFETC), August 7th to 9th, 2018 in Ottawa,
  3. (Invited) Carbon-based Nanostructures for Laser-induced patterningFlexible Electronics, Jeongwon Park, Changjian Zhou, Cary Y. Yang, IEEE International Conferences on Electron Devices and Solid-State Circuits 2018, 6 June to 8 June 2018, Shenzhen, China
  4. "(Invited) A Novel Approach to Clean Surface for High Mobility Channel Materials With in-Situ Atomic Hydrogen Clean", Park, Joe Griffith, Bo Zheng, Jerry Gelatos, Murali Narasimhan, Pravin K Narwankar, ECS Transactions, 58 (6) 275-280 (2013)
  5. Electrical and Structural Analysis of CNT-Metal Contacts in Via Interconnects, P. Wilhite, A. Vyas, J. Tan, and C. Y. Yang, P. Wang, Park, H. Ai, and M. Narasimhan, ICQNM 2013: The Seventh International Conference on Quantum, Nano and Micro Technologies (2013)
  6. Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films beyond a Critical Thickness on Si (001) Substrate, Park, M. Ishii, R. Balasubramanian, Y. Kim and S. Kurpprao. ECS Transactions, 33 (6) 523-528 (2010)
  7. Electrical Transport in Carbon Nanotube Y-junctions- a Paradigm for Novel Functionality at the Nanoscale, Park, C. Daraio, A. Rao, P. Bandaru, Mater. Res. Soc. Symp. Proc. Vol. 922, 0922- U11-08, Materials Research Society (2006)

Courses taught

Fall 2016- Winter 2019

 Undergraduate engineering classes

  • ELG 2138 Circuit Theory I (Fall 2016, Fall 2017, Fall 2018)
  • ELG 2137 Circuit Theory II (Winter 2017, Winter 2018)
  • ELG 3137 Fundamentals of Semiconductor Devices (Winter 2019)

Graduate engineering classes

  • ELG 7132 Nanoelectronics (Winter 2018, Winter 2019)

Spring 2009- Spring 2016

Undergraduate engineering classes

  • Electric Circuits I (Winter 2016)
  • Introduction to Nanotechnology (Guest lecturer) for Spring 2009
  • Nanoscale Science and Technology (Guest lecturer) for Fall 2009

Graduate engineering classes

  • Nanoelectronics (Fall 2011, Spring 2014)
  • Nanomaterials (Winter 2011, Winter 2012, Winter 2014, Spring 2016)
  • Fundamentals of Semiconductor Physics (Summer 2009, Fall 2009 and Winter 2010)